Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions
In: ECS Transactions, Jg. 13 (2008-10-24), S. 23-30
Online
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Zugriff:
The purpose of this paper is to evaluate the impact of the laser anneal on the thermal stress induced defect creation in Si1-xGex S/D junctions. It is shown that several factors play a key role in the motion of the glide dislocations during the laser anneal process, when huge thermal stress gradients are present in both lateral and vertical directions: firstly, the stress levels prior to a post-epi implantation; secondly, the ion implantation conditions and finally, the laser energy beam conditions. Nomarski inspections of preferentially etched Si1-xGex/Si hetero-epitaxial junctions have been performed in order to analyze the laser-induced morphology changes. Additionally, I-V measurements were employed to further investigate the leakage current enhancement due to the thermal stress induced defect creation in the embedded Si1-xGex S/D junctions. Both analysis methods resulted in fully consistent results, revealing an increase in motion of dislocations and dislocation density only for the splits that already showed some relaxation induced-extended defects before the laser annealing process. Moreover, the only conditions where the extended defects prior to the laser anneal were observed were when a post-epi ion implantation was processed in the epilayers with 25%Ge (the highest Ge content studied).
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Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions
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Autor/in / Beteiligte Person: | Verheyen, Peter ; Simoen, Eddy ; Absil, Philippe ; Souriau, Laurent ; Mireia Bargallo Gonzalez ; Loo, Roger ; Hoffmann, Thomas Y. ; Claeys, Cor ; Geypen, J. ; Rosseel, Erik ; Bender, Hugo |
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Zeitschrift: | ECS Transactions, Jg. 13 (2008-10-24), S. 23-30 |
Veröffentlichung: | The Electrochemical Society, 2008 |
Medientyp: | unknown |
ISSN: | 1938-6737 (print) ; 1938-5862 (print) |
DOI: | 10.1149/1.2911481 |
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