Band structure investigation of strained Si1-xGex/Si coupled quantum wells
In: International Journal of Nanotechnology, Jg. 4 (2007), S. 431-431
Online
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Zugriff:
The band structure of Si1-xGex/Si coupled quantum wells (CQW) was calculated with the 8-band k p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si0.6Ge0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20~60 while well width varies between 30~110 . Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.
| Titel: |
Band structure investigation of strained Si1-xGex/Si coupled quantum wells
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| Autor/in / Beteiligte Person: | Dao Hua Zhang ; Wang, Rong ; Lu, F. ; Fan, Weijun ; Yoon, S.F. ; Dang, Y. X. |
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| Zeitschrift: | International Journal of Nanotechnology, Jg. 4 (2007), S. 431-431 |
| Veröffentlichung: | Inderscience Publishers, 2007 |
| Medientyp: | unknown |
| ISSN: | 1741-8151 (print) ; 1475-7435 (print) |
| DOI: | 10.1504/ijnt.2007.013977 |
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