Design and analysis of SHE-assisted STT MTJ/CMOS logic gates
In: Journal of Computational Electronics, Jg. 20 (2021-08-19), S. 1964-1976
Online
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Zugriff:
We have investigated the spin-Hall effect (SHE)-assisted spin transfer torque (STT) switching mechanism in a three-terminal MTJ device developed using p-MTJ (perpendicular magnetic tunnel junction) and heavy metal materials of high atomic number, which possesses large spin–orbit interaction. Using p-MTJ schematic and complementary-metal-oxide-semiconductor (CMOS) logic, we have designed three basic hybrid logic-in-memory structure-based logic gates NOR/OR, NAND/AND, and XNOR /XOR. Then the performances of these hybrid gates are evaluated and the results are compared with the conventional CMOS-based gates in terms of power, delay, power delay product, and device count. From the analysis, it is concluded that SHE-assisted STT MTJ/CMOS logic gates are nonvolatile, consume less power, and occupy a smaller die area as compared to conventional CMOS only logic gates.
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Design and analysis of SHE-assisted STT MTJ/CMOS logic gates
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Autor/in / Beteiligte Person: | Barla, Prashanth ; Bhat, Somashekara ; Vinod Kumar Joshi |
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Zeitschrift: | Journal of Computational Electronics, Jg. 20 (2021-08-19), S. 1964-1976 |
Veröffentlichung: | Springer Science and Business Media LLC, 2021 |
Medientyp: | unknown |
ISSN: | 1572-8137 (print) ; 1569-8025 (print) |
DOI: | 10.1007/s10825-021-01759-8 |
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