INTERFACIAL EFFECTS ON THE CRYSTALLIZATION TEMPERATURE OF PMN-PT FILMS DEPOSITED ON LNO OR Pt BOTTOM ELECTRODES
In: Integrated Ferroelectrics, Jg. 98 (2008-06-13), S. 171-182
Online
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Zugriff:
PMN-PT (70/30) thin films were deposited by rf magnetron sputtering on silicon substrate. Two types of bottom electrodes were studied: classical TiO x /Pt and LNO. The first one is deposited by sputtering and the LNO by sol gel. Depending on the electrode nature, thickness, … the diffusion such as oxygen, lead or other species are completely different. PMN-PT annealing temperature were studied in the range of 450 to 700°C; the interface quality is directly related to the annealing temperature. Our study was focused on the bottom electrode/PMN-PT thin films interfaces. We present dielectric and ferroelectric. They are analysed in the view of interfacial layers (nature and thickness), films structure and microstructure.
Titel: |
INTERFACIAL EFFECTS ON THE CRYSTALLIZATION TEMPERATURE OF PMN-PT FILMS DEPOSITED ON LNO OR Pt BOTTOM ELECTRODES
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Autor/in / Beteiligte Person: | Thu Trang Nguyen ; Wang, Genshui ; Detalle, M. ; Remiens, Denis |
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Zeitschrift: | Integrated Ferroelectrics, Jg. 98 (2008-06-13), S. 171-182 |
Veröffentlichung: | Informa UK Limited, 2008 |
Medientyp: | unknown |
ISSN: | 1607-8489 (print) ; 1058-4587 (print) |
DOI: | 10.1080/10584580802093520 |
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