Effects of Long-Time Current Annealing to the Hysteresis in CVD Graphene on SiO2
In: MRS Advances, Jg. 4 (2019-09-17), S. 3319-3326
Online
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Zugriff:
Graphene specimens produced by chemical vapor deposition usually show p-type characteristics and significant hysteresis in ambient conditions. Among many methods, current annealing appears to be a better way of cleaning the sample due to the possibility of in-situ annealing in the measurement setup. However, long-time current annealing could increase defects in the underlying substrate. Studying the hysteresis with different anneal currents in a graphene device is, therefore, a topic of interest. In this experimental work, we investigate electron/hole transport in a graphene sample in the form of a Hall bar device with a back gate, where the graphene was prepared using chemical vapor deposition on copper foils. We study the hysteresis before and after current annealing the sample by cooling down to a temperature of 35 Kfrom room temperature with a back-gate bias in a closed cycle refrigerator.
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Effects of Long-Time Current Annealing to the Hysteresis in CVD Graphene on SiO2
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Autor/in / Beteiligte Person: | Kriisa, Annika ; U. Kushan Wijewardena ; Nanayakkara, Tharanga ; Mani, Ramesh ; Samaraweera, Rasanga ; Withanage, Sajith |
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Zeitschrift: | MRS Advances, Jg. 4 (2019-09-17), S. 3319-3326 |
Veröffentlichung: | Springer Science and Business Media LLC, 2019 |
Medientyp: | unknown |
ISSN: | 2059-8521 (print) |
DOI: | 10.1557/adv.2019.366 |
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