Efficient electrooptic modulator in InGaAlAs/InP optical waveguides
In: IEEE Photonics Technology Letters, Jg. 5 (1993), S. 46-49
Online
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Zugriff:
A single heterostructure InGaAlAs/InP phase modulator utilizing the quadratic electrooptic effect (QEO) is reported for the first time. The calculated value of the QEO coefficient from the measurements is 3.7*10/sup -19/ m/sup 2//V/sup 2/ at 80 meV below the band edge. In addition, the linear electrooptic effect (LEO) coefficient is estimated to be 1.2*10/sup -12/ m/V, which is comparable to that of GaAs. The propagation loss of a single mode ridge waveguide is in the range of 1.5-1.7 dB/cm, which is better than the previously reported value in this material system. The measured single mode phase shifts are 5.5 and 2.8 degrees /V mm for TE and TM polarizations, respectively. These values are the largest reported so far in an InGaAlAs system. >
Titel: |
Efficient electrooptic modulator in InGaAlAs/InP optical waveguides
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Autor/in / Beteiligte Person: | Han, Sang-Kook ; Bhattacharya, Pallab ; Li, W.-Q. ; Ramaswamy, Ramu V. |
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Zeitschrift: | IEEE Photonics Technology Letters, Jg. 5 (1993), S. 46-49 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 1993 |
Medientyp: | unknown |
ISSN: | 1941-0174 (print) ; 1041-1135 (print) |
DOI: | 10.1109/68.185056 |
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