A 250-GHz 12.6-dB Gain and 3.8-dBm P sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G max-Core
In: IEEE Microwave and Wireless Components Letters, Jg. 31 (2021-03-01), S. 292-295
Online
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Zugriff:
This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain ( $G_{\mathrm {max}}$ ) core. By the adoption of the dual-shunt-element-based $G_{\mathrm {max}}$ -core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, $P_{\mathrm {sat}}$ of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.
| Titel: |
A 250-GHz 12.6-dB Gain and 3.8-dBm P sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G max-Core
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| Autor/in / Beteiligte Person: | Hafiz Usman Mahmood ; Choi, Won-Jong ; Lee, Sang-Gug ; Yun, Byeonghun ; Park, Dae-Woong |
| Link: | |
| Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 31 (2021-03-01), S. 292-295 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
| Medientyp: | unknown |
| ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
| DOI: | 10.1109/lmwc.2020.3046745 |
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