A 2 × 6b 8 GS/s 17–24-GHz I/Q RF-DAC-Based Transmitter in 22-nm FDSOI CMOS
In: IEEE Microwave and Wireless Components Letters, Jg. 31 (2021-08-01), S. 929-932
Online
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Zugriff:
We describe a $2\times 6$ bit Cartesian RF in-phase and quadrature (IQ)-modulator, implemented on 0.15 mm2 in 22-mm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. Measurements show a 3-dB bandwidth of 17–24-GHz and saturated output power of 10.4 dBm with a peak drain efficiency of 15.6%. The IQ-modulator has been verified up to 8 GS/s. To the best of our knowledge, this is the highest-frequency CMOS RF IQ-modulator using sub-50%-duty-cycle local oscillator (LO) signals, and the highest sample rate reported for >3 bit fully integrated Cartesian IQ-modulators.
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A 2 × 6b 8 GS/s 17–24-GHz I/Q RF-DAC-Based Transmitter in 22-nm FDSOI CMOS
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Autor/in / Beteiligte Person: | Aberg, Victor ; Fager, Christian ; Svensson, Lars |
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Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 31 (2021-08-01), S. 929-932 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
DOI: | 10.1109/lmwc.2021.3089779 |
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