(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts
In: ECS Transactions, Jg. 58 (2013-08-31), S. 167-178
Online
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Zugriff:
Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, it is desirable that the source/drain (S/D) junctions are composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the contact formation showing a low electron barrier height (ΦBN) is very difficult. We have found TiN on Ge is superior as a low ΦBN contact. In this paper, we present the detailed fabrication and the electrical performance of a TiN/Ge contact. Furthermore, we present the excellence of a HfGe/Ge contact showing a low hole barrier height (ΦBP). Finally, we present the fabrication and device performance of metal S/D n- and p-MOSFETs using TiN/Ge and HfGe/Ge contacts, respectively.
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(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts
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Autor/in / Beteiligte Person: | Yamamoto, Keisuke ; Wang, Dong ; Nakashima, Hiroshi |
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Zeitschrift: | ECS Transactions, Jg. 58 (2013-08-31), S. 167-178 |
Veröffentlichung: | The Electrochemical Society, 2013 |
Medientyp: | unknown |
ISSN: | 1938-6737 (print) ; 1938-5862 (print) |
DOI: | 10.1149/05809.0167ecst |
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