A 19.2 mW, ${> 45}~{\rm dB}$ Gain and High-Selectivity 94 GHz LNA in 0.13 $\mu{\rm m}$ SiGe BiCMOS
In: IEEE Microwave and Wireless Components Letters, Jg. 23 (2013-05-01), S. 261-263
Online
unknown
Zugriff:
In this letter, a high-gain and selectivity W-band LNA using 0.13 $\mu{\rm m}$ SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6–8.3 dB at 77–101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters.
| Titel: |
A 19.2 mW, ${> 45}~{\rm dB}$ Gain and High-Selectivity 94 GHz LNA in 0.13 $\mu{\rm m}$ SiGe BiCMOS
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| Autor/in / Beteiligte Person: | Yong Zhong Xiong ; Guo, Yong-Xin ; Bi, Xiaojun ; Muthukumaraswamy Annamalai Arasu ; Je, Minkyu |
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| Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 23 (2013-05-01), S. 261-263 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2013 |
| Medientyp: | unknown |
| ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
| DOI: | 10.1109/lmwc.2013.2251620 |
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