Numerical Modeling and Simulation of CIGS-Based Solar Cells with ZnS Buffer Layer
In: Open Journal of Modelling and Simulation, 2017, S. 218-231
Online
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Zugriff:
Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.
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Numerical Modeling and Simulation of CIGS-Based Solar Cells with ZnS Buffer Layer
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Autor/in / Beteiligte Person: | Touré, Siaka ; Vilcot, Jean-Pierre ; Sylla, Adama |
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Zeitschrift: | Open Journal of Modelling and Simulation, 2017, S. 218-231 |
Veröffentlichung: | Scientific Research Publishing, Inc., 2017 |
Medientyp: | unknown |
ISSN: | 2327-4026 (print) ; 2327-4018 (print) |
DOI: | 10.4236/ojmsi.2017.54016 |
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