29.2: Silicon Ink-Based Poly Si CMOS TFT Fabricated on 300mm Stainless Steel Foil Substrates

Laser crystallized CMOS TFTs were fabricated on thin 300 mm stainless steel substrates using novel coated silicon in a Printed Dopant PolySilicon (PDPS) process-flow [1]. Silicon ink will be a key building block for low-cost, continuous large-area coating or printing in very high-volume roll-to-roll manufacturing. RF devices with PECVD-equivalent TFT characteristics using semiconductor-grade inks are routinely fabricated using this process. This technology is foundational to low-cost, high-volume, RF (13.56MHz), display and integrated sensor system circuits on thin, large-area flexible and durable substrates.