Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
In: ACS Applied Electronic Materials, Jg. 2 (2020-05-29), S. 1752-1758
Online
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Zugriff:
In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 °C, which show ferroelectric behavior after annealing at 450 °C, compatible with...
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Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
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Autor/in / Beteiligte Person: | Ionescu, Adrian M. ; Cavalieri, Matteo ; O’Connor, Éamon ; Gastaldi, Carlotta ; Stolichnov, Igor |
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Zeitschrift: | ACS Applied Electronic Materials, Jg. 2 (2020-05-29), S. 1752-1758 |
Veröffentlichung: | American Chemical Society (ACS), 2020 |
Medientyp: | unknown |
ISSN: | 2637-6113 (print) |
DOI: | 10.1021/acsaelm.0c00319 |
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