Epitaxial Growth of Silicon on Hexagonal Silicon Carbide

The epitaxial growth of silicon on the basal plane of hexagonal silicon carbide substrates has been studied using the pyrolysis of silane in a flow system. The effects of deposition variables on the properties of grown films were evaluated using chemical etching and optical microscope techniques. The films were found to have almost exclusively {111} and {110} orientations and were found to be different in appearance on the carbon and silicon faces of the substrate. The epitaxial orientations were confirmed by reflection electron diffraction. The device quality of these films was established by preparing small diffused and epitaxial p‐n junctions and MOS transistors.