Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
In: ACS Applied Materials & Interfaces, Jg. 9 (2016-12-29), S. 566-572
Online
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Zugriff:
To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
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Autor/in / Beteiligte Person: | Lee, Hyangsook ; Cha, Taeho ; Kim, Hyoungsub ; Lee, Hyung-Ik ; Choi, Seongheum ; Kim, Jinyong ; Kim, Chul-Sung ; Kim, Sun-jung ; Kim, Yihwan ; Kim, Jin-Bum ; Lee, Eunha ; Jung Yeon Won ; Kwon, Kee-Won ; Hyun, Sang-Jin ; Park, Taejin ; Shin, Dong-Suk |
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Zeitschrift: | ACS Applied Materials & Interfaces, Jg. 9 (2016-12-29), S. 566-572 |
Veröffentlichung: | American Chemical Society (ACS), 2016 |
Medientyp: | unknown |
ISSN: | 1944-8252 (print) ; 1944-8244 (print) |
DOI: | 10.1021/acsami.6b12968 |
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