Special Section Guest Editorial: Advanced Plasma-Etch Technology
In: Journal of Micro/Nanolithography, MEMS, and MOEMS, Jg. 12 (2013-12-23), S. 041301-41301
Online
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Zugriff:
Plasma etch technology is an integral and indispensible part of patterning technology that has enabled continuous scaling in the semiconductor industry for more than forty years. Advancement in plasma-etch technology, along with other semiconductor process technologies, has brought the state-of-the-art semiconductor technology, the so-called 22 nm node of complementary metal–oxide–semiconductor (CMOS) technology, into mass production. This 22 nm node CMOS technology features a three-dimensional (3-D) FinFET, a metal one pitch of about 90 nm and copper/low-k interconnects. The next generation of 14 nm node CMOS technology is expected to be brought into mass production in the first quarter of 2014.
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Special Section Guest Editorial: Advanced Plasma-Etch Technology
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Autor/in / Beteiligte Person: | Zhang, Ying ; Lin, Qinghuang ; Oehrlein, Gottlieb S. |
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Zeitschrift: | Journal of Micro/Nanolithography, MEMS, and MOEMS, Jg. 12 (2013-12-23), S. 041301-41301 |
Veröffentlichung: | SPIE-Intl Soc Optical Eng, 2013 |
Medientyp: | unknown |
ISSN: | 1932-5150 (print) |
DOI: | 10.1117/1.jmm.12.4.041301 |
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