Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)
In: Applied Physics Letters, Jg. 33 (1978-10-01), S. 596-598
Online
unknown
Zugriff:
Data are presented showing that AlxGa1−xAs (x∼0.42) grown by metalorganic chemical vapor deposition (MO‐CVD) will operate as a photopumped laser to wavelengths as short as ∼6200 A (77 °K). From the different spectral behavior of two separately photopumped epitaxial AlxGa1−xAs (x∼0.36) confining layers (1 and 0.3 μm thick) with an 80‐A (and a comparison 200‐A) GaAs quantum‐well center layer, the recombination of hot electrons with holes collected in the quantum layer is used to estimate ΔEv.
| Titel: |
Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)
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| Autor/in / Beteiligte Person: | Holonyak, Nick ; Dupuis, R. D. ; Shichijo, Hisashi ; Kolbas, R. M. ; Dapkus, P. D. |
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| Zeitschrift: | Applied Physics Letters, Jg. 33 (1978-10-01), S. 596-598 |
| Veröffentlichung: | AIP Publishing, 1978 |
| Medientyp: | unknown |
| ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
| DOI: | 10.1063/1.90473 |
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