Ultra-Low voltage-power DTMOS based full-wave rectifier
In: AEU - International Journal of Electronics and Communications, Jg. 91 (2018-07-01), S. 18-23
Online
unknown
Zugriff:
In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors.
Titel: |
Ultra-Low voltage-power DTMOS based full-wave rectifier
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Autor/in / Beteiligte Person: | Babacan, Yunus |
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Zeitschrift: | AEU - International Journal of Electronics and Communications, Jg. 91 (2018-07-01), S. 18-23 |
Veröffentlichung: | Elsevier BV, 2018 |
Medientyp: | unknown |
ISSN: | 1434-8411 (print) |
DOI: | 10.1016/j.aeue.2018.04.023 |
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