Integrated 0–30 V switching driver circuit fabricated by mesa isolation postprocess of standard 5 V CMOS LSI for MEMS actuator applications
In: Microsystem Technologies, Jg. 24 (2017-04-24), S. 503-510
Online
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Zugriff:
A 30 V switching circuit with standard CMOS foundry-made transistors on a silicon-on-insulator (SOI) wafer is proposed.The key fabrication process is mesa isolation postprocessing that physically separates a series-connected transistor's body so that we can apply independent substrate (body) voltages to each transistor. The process is a combination of anisotropic and isotropic deep reactive ion etching (DRIE) with a single mask. In the experiment, CMOS transistors were fabricated on a 9-µm-thick 6-in. SOI wafer in an LSI foundry company, and the postprocess was carried out in a MEMS cleanroom. In this paper, full integration with gate-voltage-level shift circuits and dynamic driving of an electrostatic comb-drive MEMS device with series-connected transistors are presented.
Titel: |
Integrated 0–30 V switching driver circuit fabricated by mesa isolation postprocess of standard 5 V CMOS LSI for MEMS actuator applications
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Autor/in / Beteiligte Person: | Okamoto, Yuki ; Mita, Yoshio |
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Zeitschrift: | Microsystem Technologies, Jg. 24 (2017-04-24), S. 503-510 |
Veröffentlichung: | Springer Science and Business Media LLC, 2017 |
Medientyp: | unknown |
ISSN: | 1432-1858 (print) ; 0946-7076 (print) |
DOI: | 10.1007/s00542-017-3416-7 |
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