Back channel etch oxide TFT on plastic substrate for the application of high resolution TFT-LCD
In: 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014-07-01
Online
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Zugriff:
We present high performance back channel etch (BCE) oxide TFT of which overlap capacitance between source/drain and gate is minimized. With considering application to the plastic LCD, we fabricated BCE TFT under 250 o C with PECVD SiN x /PEALD SiO 2 gate insulator and its mobility, S.S, V th are 28.7 cm 2 /V.s, 0.1 V/dec, and 1.06 V, respectively. Its V th shift under positive bias stress for 10,000 seconds is 0.75 V at 20V. BCE TFT fabricated on transparent GFRHybrimer film which has no retardation showed mobility of 19.1 cm 2 /V.s.
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Back channel etch oxide TFT on plastic substrate for the application of high resolution TFT-LCD
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| Autor/in / Beteiligte Person: | Bae, Byeong-Soo ; Jong Woo Kim ; Im, Hyein-Gyun ; Jin, Jungho ; Sang-Hee Ko Park ; In Yong Eom ; Ryu, Min-Ki ; Hwea Yoon Kim ; Sung Haeng Cho ; Hwang, Chi-Sun |
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| Zeitschrift: | 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014-07-01 |
| Veröffentlichung: | IEEE, 2014 |
| Medientyp: | unknown |
| DOI: | 10.1109/am-fpd.2014.6867117 |
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