A Single Transistor-Level Direct-Conversion Mixer for Low-Voltage Low-Power Multi-band Radios
In: ETRI Journal, Jg. 27 (2005-10-14), S. 579-584
Online
unknown
Zugriff:
A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.
Titel: |
A Single Transistor-Level Direct-Conversion Mixer for Low-Voltage Low-Power Multi-band Radios
|
---|---|
Autor/in / Beteiligte Person: | Byoung Gun Choi ; Tak, Geum-Young ; Park, Seong-Su ; Hyun, Seok-Bong ; Chul Soon Park ; Lee, Hee-Tae |
Link: | |
Zeitschrift: | ETRI Journal, Jg. 27 (2005-10-14), S. 579-584 |
Veröffentlichung: | Wiley, 2005 |
Medientyp: | unknown |
ISSN: | 1225-6463 (print) |
DOI: | 10.4218/etrij.05.0905.0009 |
Schlagwort: |
|
Sonstiges: |
|