Direct insights into RbInSe2 formation at Cu(In,Ga)Se2 thin film surface with RbF postdeposition treatment
In: Applied Physics Letters, Jg. 113 (2018-09-10), S. 113903-113903
Online
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Zugriff:
Scanning transmission electron microscopy-energy dispersive X-ray spectroscopy measurements performed on Cu(In,Ga)Se2 (CIGS) thin-film devices grown with RbF postdeposition treatment (RbF-PDT) revealed the formation of a RbInSe2 compound at the p-CIGS/n-CdS heterointerface. However, this type of Rb-compound formation was not observed with elemental In-free ternary CuGaSe2 (CGS) devices. The film surface of CIGS grown with RbF-PDT was found to be Ga-depleted; thus, the practical interface structure turned out to be CIGS/(CuInSe2, RbInSe2)/CdS. In contrast to the significant improvements observed in In-containing CIGS photovoltaic device performance with RbF-PDT, no significant improvements have been observed in In-free CGS devices thus far. These results suggest that the presence of elemental In plays a key role in obtaining beneficial alkali Rb effects for enhancing device performance as well as surface modification with RbF-PDT.Scanning transmission electron microscopy-energy dispersive X-ray spectroscopy measurements performed on Cu(In,Ga)Se2 (CIGS) thin-film devices grown with RbF postdeposition treatment (RbF-PDT) revealed the formation of a RbInSe2 compound at the p-CIGS/n-CdS heterointerface. However, this type of Rb-compound formation was not observed with elemental In-free ternary CuGaSe2 (CGS) devices. The film surface of CIGS grown with RbF-PDT was found to be Ga-depleted; thus, the practical interface structure turned out to be CIGS/(CuInSe2, RbInSe2)/CdS. In contrast to the significant improvements observed in In-containing CIGS photovoltaic device performance with RbF-PDT, no significant improvements have been observed in In-free CGS devices thus far. These results suggest that the presence of elemental In plays a key role in obtaining beneficial alkali Rb effects for enhancing device performance as well as surface modification with RbF-PDT.
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Direct insights into RbInSe2 formation at Cu(In,Ga)Se2 thin film surface with RbF postdeposition treatment
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Autor/in / Beteiligte Person: | Tanaka, Shingo ; Taguchi, Noboru ; Ishizuka, Shogo |
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Zeitschrift: | Applied Physics Letters, Jg. 113 (2018-09-10), S. 113903-113903 |
Veröffentlichung: | AIP Publishing, 2018 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/1.5044244 |
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