Research and Design of X-band Low Noise Amplifier Based on CMOS Process
In: Journal of Physics: Conference Series, Jg. 2108 (2021-11-01), S. 012102-12102
Online
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Zugriff:
Based on CMOS process, a low noise amplifier(LNA) operating at 7.4GHz~11.4GHz was designed. The two-stage differential cascode structure is adopted. Transformer was used to achieve inter-stage matching. Balun was used to achieve input and output matching, which reduces the number of inductors used, effectively reduces the chip size while ensuring good gain and noise figure. The actual measurement results show that the power gain at the center frequency of 9.4GHz is 27dB, the maximum noise figure is less than 3.82dB, the output power 1dB compression point is greater than 8dBm, the chip area is only 0.41mm×0.83mm(excluding PAD).
| Titel: |
Research and Design of X-band Low Noise Amplifier Based on CMOS Process
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| Autor/in / Beteiligte Person: | Ma, Chao ; Sun, Haitao ; Wu, Hongjiang ; Lu, Xudong |
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| Zeitschrift: | Journal of Physics: Conference Series, Jg. 2108 (2021-11-01), S. 012102-12102 |
| Veröffentlichung: | IOP Publishing, 2021 |
| Medientyp: | unknown |
| ISSN: | 1742-6596 (print) ; 1742-6588 (print) |
| DOI: | 10.1088/1742-6596/2108/1/012102 |
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