High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-/spl mu/m wavelength regime
In: IEEE Photonics Technology Letters, Jg. 14 (2002-03-01), S. 363-365
Online
unknown
Zugriff:
In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (/spl sim/1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-/spl mu/m) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-/spl mu/m-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for Icing optical communication wavelength (1.2 /spl mu/m-1.6 /spl mu/m) applications.
| Titel: |
High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-/spl mu/m wavelength regime
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| Autor/in / Beteiligte Person: | Shi, Jin-Wei ; Chen, Yen-Hung ; Sun, Chi-Kuang ; Chiu, Yi-Jen ; Gan, Kian-Giap ; Bowers, John E. |
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| Zeitschrift: | IEEE Photonics Technology Letters, Jg. 14 (2002-03-01), S. 363-365 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2002 |
| Medientyp: | unknown |
| ISSN: | 1941-0174 (print) ; 1041-1135 (print) |
| DOI: | 10.1109/68.986814 |
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