Effect of combined treatment of cesium fluoride as precursor and post-treatment on Cu(In,Ga)Se2 thin film solar cell
In: Applied Physics Letters, Jg. 118 (2021-03-15), S. 113901-113901
Online
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Zugriff:
In this study, we investigate the combined effect of cesium fluoride (CsF) as a precursor and post-treatment on a Cu(Inx,Ga1-x)Se2 (CIGS) thin film solar cell fabricated onto sodalime glass substrates. The combined treatment improves the open-circuit voltage, fill factor, and cell efficiency of the solar cell compared with its single counter treatment. Secondary ion mass spectroscopy measurements show a higher concentration of Cs diffusion in the surface regions in the combined treatment, which change the electronic properties of the buffer/CIGS interface by reducing interfacial recombination. Solar cells fabricated using CsF as a precursor indicate a deterioration in device performance owing to the formation of bulk defects, as confirmed from admittance spectroscopy. This study unveils device performance improvement by combining a heavy alkali metal as a precursor and post-treatment on CIGS thin film solar cells.
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Effect of combined treatment of cesium fluoride as precursor and post-treatment on Cu(In,Ga)Se2 thin film solar cell
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Autor/in / Beteiligte Person: | Khatri, Ishwor ; Sugiyama, Mutsumi |
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Zeitschrift: | Applied Physics Letters, Jg. 118 (2021-03-15), S. 113901-113901 |
Veröffentlichung: | AIP Publishing, 2021 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/5.0043464 |
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