CMOS multiband low-noise amplifier using inner diameter shared inductors
In: Electronics Letters, Jg. 44 (2008), S. 1404-1404
Online
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Zugriff:
A new integrated inductor structure suitable for multiband application is proposed and used to implement a CMOS multiband low-noise amplifier. Its occupied silicon area can be decreased by more than 40% while its performance is almost the same as those of LNAs using the conventional inductor structure. It is fabricated in a 0.13%%m CMOS process and its measured results show gains of 16.8, 15.8 and 15.5%dB, with NFs of 1.4, 1.8 and 1.9%dB, and IIP3 of 4, 0 and %2%dBm for the 850, 1800/1900 and 2100%MHz bands, respectively.
Titel: |
CMOS multiband low-noise amplifier using inner diameter shared inductors
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Autor/in / Beteiligte Person: | Moon, Hi-Chan |
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Zeitschrift: | Electronics Letters, Jg. 44 (2008), S. 1404-1404 |
Veröffentlichung: | Institution of Engineering and Technology (IET), 2008 |
Medientyp: | unknown |
ISSN: | 0013-5194 (print) |
DOI: | 10.1049/el:20082673 |
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