The application of optical resolution enhancement technology and e-beam direct writing technology in microfabrication
In: SPIE Proceedings, 2005-01-27
Online
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Zugriff:
The Micro-processing & Nano-technology Laboratory at the Institute of Microelectronics, Chinese Academy of Sciences (CAS), is equipped with a GCA 3600F PG&3696, a JBX 6AII & JBX 5000LS EB, and an ETEC MEBES 4700S EB. For a long time we have been engaged in the research and manufacture on Optical Resolution Enhancement Technology (RET) and E-Beam Direct Writing Technology. In this paper the following technologies will be described: PSM, OPC EBDW,EPC,Match & Mixed Lithography technology. Through the application of RET in optical lithography system, we completed the 0.2 um pattern with the g line and I line light source, which is the necessary preparation for 100nm node with 193nm light source. By means of match & mixed lithography and nanofabrication technology, 20nm-50nm gate CMOS transistor and 100nm gate HEMT are successfully developed.
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The application of optical resolution enhancement technology and e-beam direct writing technology in microfabrication
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Autor/in / Beteiligte Person: | Tang, Yueke ; Ren, Liming ; Kang, Xiaohui ; Liu, Ming ; Hu, Yong ; Li, Jinru ; Xue, Lijun ; Xu, Qiuxia ; Li, Ling ; Lu, Jing ; Chen, Baoqin ; Long, Shibing ; Qiu, Yulin |
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Zeitschrift: | SPIE Proceedings, 2005-01-27 |
Veröffentlichung: | SPIE, 2005 |
Medientyp: | unknown |
ISSN: | 0277-786X (print) |
DOI: | 10.1117/12.576170 |
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