A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology
In: Modern Physics Letters B, Jg. 33 (2019-03-30), S. 1950099-1950099
Online
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Zugriff:
A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.
Titel: |
A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology
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Autor/in / Beteiligte Person: | Chio, U-Fat ; Yuanyao, Zhao ; Wang, Guang ; Jun, Yuan ; Wang, Wei ; Hong'an, Zeng |
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Zeitschrift: | Modern Physics Letters B, Jg. 33 (2019-03-30), S. 1950099-1950099 |
Veröffentlichung: | World Scientific Pub Co Pte Lt, 2019 |
Medientyp: | unknown |
ISSN: | 1793-6640 (print) ; 0217-9849 (print) |
DOI: | 10.1142/s0217984919500994 |
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