CIGS-based solar cells prepared from electrodeposited stacked Cu/In/Ga layers
In: Solar Energy Materials and Solar Cells, Jg. 113 (2013-06-01), S. 96-99
Online
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Zugriff:
Previously, we reported 15.4%-efficient copper indium gallium diselenide (CIGS)-based photovoltaic devices from electrodeposited precursor films in which the final film composition was adjusted using the physical vapor deposition (PVD) method. At present, we are fabricating CIGS-based solar cells directly from electrodeposited precursor films, eliminating the expensive PVD step. Electrodeposited CIGS absorber layers are fabricated from a stacked Cu/In/Ga layers. All films are electrodeposited from an aqueous-based solution at room temperature in a two-electrode cell configuration, with platinum gauze as the counter electrode and a glass substrate as the working electrode. The substrate is DC-sputtered with about 1 μm of Mo. The electrodeposited films are selenized at high temperature (∼550 °C) to obtain 11.7%-efficient device.
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CIGS-based solar cells prepared from electrodeposited stacked Cu/In/Ga layers
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Autor/in / Beteiligte Person: | Bhattacharya, Raghu N. |
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Zeitschrift: | Solar Energy Materials and Solar Cells, Jg. 113 (2013-06-01), S. 96-99 |
Veröffentlichung: | Elsevier BV, 2013 |
Medientyp: | unknown |
ISSN: | 0927-0248 (print) |
DOI: | 10.1016/j.solmat.2013.01.028 |
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