Design of Ka band Low Noise Amplifier Based on 65nm CMOS Technology

In this paper, A Ka band low noise amplifier (LNA) using techniques of transformer matching and cross-coupling capacitance is designed using 65nm CMOS technology, the operating band covers 28-40GHz. The measured results show that this LNA consumes 14.2 mW under 1V, and high performances are achieved with the gain of 7.1 dB, noise figure(NF) of 5.9 dB, and the input 1dB compression point(P 1dB ) of −2.3 dBm. The chip occupies a silicon area of $320 \mu \mathrm{m}\times 280\, \mu \mathrm{m}$ .