Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane
In: physica status solidi (a), Jg. 212 (2015-05-13), S. 2525-2532
Online
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Zugriff:
Homoepitaxial single crystal diamond layers with bright photoluminescence (PL) of silicon-vacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH4H2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH4/CH4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6%SiH4/CH4, and a rapid PL quenching at higher Si doping. The maximum SiV concentration of ≈450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within non-epitaxial inclusions in single crystal diamond film.
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Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane
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Autor/in / Beteiligte Person: | Khomich, A. V. ; Ralchenko, Victor ; Trofimov, Nikolay ; Sedov, Vadim S. ; Saraykin, Vladimir ; Khmelnitskii, Roman A. ; Krivobok, V. S. ; Bolshakov, Andrey ; Khomich, Andrey A. ; Vlasov, Igor I. ; Nikolaev, Sergei |
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Zeitschrift: | physica status solidi (a), Jg. 212 (2015-05-13), S. 2525-2532 |
Veröffentlichung: | Wiley, 2015 |
Medientyp: | unknown |
ISSN: | 1862-6300 (print) |
DOI: | 10.1002/pssa.201532174 |
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