224-ke Saturation signal global shutter CMOS image sensor with in-pixel pinned storage and lateral overflow integration capacitor
In: 2017 Symposium on VLSI Circuits, 2017-06-01
Online
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Zugriff:
The required incorporation of an additional in-pixel retention node for global shutter complementary metal-oxide semiconductor (CMOS) image sensors means that achieving a large saturation signal presents a challenge. This paper reports a 3.875-μm pixel single exposure global shutter CMOS image sensor with an in-pixel pinned storage (PST) and a lateral-overflow integration capacitor (LOFIC), which extends the saturation signal to 224 ke, thereby enabling the saturation signal per unit area to reach 14.9 ke/μm. This pixel can assure a large saturation signal by using a LOFIC for accumulation without degrading the image quality under dark and low illuminance conditions owing to the PST.
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224-ke Saturation signal global shutter CMOS image sensor with in-pixel pinned storage and lateral overflow integration capacitor
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| Autor/in / Beteiligte Person: | Akiyama, Kentaro ; Sakakibara, Masaki ; Oike, Yusuke ; Azami, Kenji ; Honda, Katsumi ; Hirano, Tomoyuki ; Sakano, Yorito ; Sugawa, Shigetoshi ; Narabu, Tadakuni ; Hirayama, Teruo ; Sakai, Shin ; Kato, Yuri ; Sato, Mamoru ; Tashiro, Yoshiaki ; Sogo, Yasunori ; Ezaki, Takayuki ; Taura, Tadayuki |
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| Zeitschrift: | 2017 Symposium on VLSI Circuits, 2017-06-01 |
| Veröffentlichung: | IEEE, 2017 |
| Medientyp: | unknown |
| DOI: | 10.23919/vlsic.2017.8008498 |
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