Design and analysis of CMOS RCG transimpedance amplifier based on elliptic filter approach
In: IET Circuits, Devices & Systems, Jg. 12 (2018-04-25), S. 497-504
Online
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Zugriff:
This study presents a new design of compact transimpedance amplifier (TIA) for optical communication applications. By adopting the regulated common gate (RCG) topology, the proposed amplifier is designed and synthesised based on a third-order elliptic filter approach. Implemented in 0.13 μm complementary metal oxide semiconductor technology, the post layout simulation results provide 50 dB Ω of direct current gain, 15 GHz of bandwidth, 20 pA/√Hz as an input referred noise current performance. The proposed RCG TIA occupies a 19 × 36 μm 2 while consuming 5.34 mW under 1.2 V supply voltage, only.
Titel: |
Design and analysis of CMOS RCG transimpedance amplifier based on elliptic filter approach
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Autor/in / Beteiligte Person: | Escid, Hammoudi ; Slimane, Abdelhalim ; Sid Ahmed Tedjini ; Salhi, Sonia |
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Zeitschrift: | IET Circuits, Devices & Systems, Jg. 12 (2018-04-25), S. 497-504 |
Veröffentlichung: | Institution of Engineering and Technology (IET), 2018 |
Medientyp: | unknown |
ISSN: | 1751-8598 (print) ; 1751-858X (print) |
DOI: | 10.1049/iet-cds.2017.0449 |
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