Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
In: IEEE Transactions on Electron Devices, Jg. 67 (2020-10-01), S. 4010-4020
Online
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Zugriff:
Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large currents and voltages rapidly with low losses. However, the end systems using these devices are often limited by the parasitics of integrating and driving these chips from the silicon complementary metal–oxide-semiconductor-based design (CMOS) circuitry necessary for complex control logic. For that reason, implementation of CMOS logic directly in the wide bandgap platform has become a way for each maturing material to compete. This review examines potential CMOS monolithic and hybrid approaches in a variety of wide bandgap materials.
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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
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Autor/in / Beteiligte Person: | Han Wui Then ; Hickman, Austin ; Chowdhury, Nadim ; Samuel James Bader ; Lee, Hyunjea ; Molnar, Alyosha ; Jena, Debdeep ; Palacios, Tomas ; Huang, Shimin ; Huili Grace Xing ; Chaudhuri, Reet |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 67 (2020-10-01), S. 4010-4020 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2020 |
Medientyp: | unknown |
ISSN: | 1557-9646 (print) ; 0018-9383 (print) |
DOI: | 10.1109/ted.2020.3010471 |
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