Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications
In: 2019 IEEE International Electron Devices Meeting (IEDM), 2019-12-01
Online
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Zugriff:
In this work, we proposed a complementary memory cell with 2T4D XNOR structure for computing in memory (CIM) applications. Firstly, a field-programmable diode (FPD) was demonstrated with a W/Hf 0 5Zr 0 5O 2 (HZO)/W structure. After analyzing the mechanism of FPD device, a 1T2D structure was proposed for voltage-output memory application featuring stable voltage ratio (~0.9 V), read disturbance immunity (>109) and ultra-low leakage current (
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Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications
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Autor/in / Beteiligte Person: | Tai, Lu ; Lv, Hangbing ; Yu, Haoran ; Zheng, Xu ; Liu, Qi ; Yang, Jianhua ; Yu, Jie ; Gong, Tiancheng ; Xue, Xiaoyong ; Chen, Bing ; Cao, Rongrong ; Luo, Qing ; Liu, Ming ; Li, Xiaoyan ; Xu, Xiaoxin ; Yuan, Peng ; Zhou, Keji |
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Zeitschrift: | 2019 IEEE International Electron Devices Meeting (IEDM), 2019-12-01 |
Veröffentlichung: | IEEE, 2019 |
Medientyp: | unknown |
DOI: | 10.1109/iedm19573.2019.8993545 |
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