A Fully Integrated Cryo-CMOS SoC for State Manipulation, Readout, and High-Speed Gate Pulsing of Spin Qubits
In: IEEE Journal of Solid-State Circuits, Jg. 56 (2021-11-01), S. 3289-3306
Online
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Zugriff:
This article presents a fully integrated Cryo-CMOS system on chip (SoC) for quantum computing. The proposed SoC integrates a radio frequency (RF) pulse modulator for qubit state manipulation, a multi-tone signal generator and a coherent receiver for qubit state readout, and 22 DACs for high-speed voltage pulsing of qubit gates. By adopting frequency division multiplexing and direct digital synthesis (DDS), the RF pulse modulator can control up to 16 qubits over a single RF line, and the readout receiver can detect the state of up to six qubits simultaneously. The proposed SoC also integrates a microcontroller for low latency on-chip signal processing and increased flexibility in implementing quantum instruction sets. A detailed analysis of qubit-state readout fidelity and the impact of finite DAC resolution on two-qubit gate fidelity is also included in this article, together with an electrical specification summary. The SoC is implemented in Intel’s 22 nm FFL fin field-effect transistor (FinFET) process, and it is characterized both at room and 4 K temperatures. The performance of each specific block is measured, with the readout characterized in a loop-back configuration. Generation of the control signals required for a full Rabi oscillation experiment is also demonstrated. This article also describes the cryogenic thermalization techniques used to integrate the SoC in the dilution refrigerator and shows temperature measurements during operation.
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A Fully Integrated Cryo-CMOS SoC for State Manipulation, Readout, and High-Speed Gate Pulsing of Spin Qubits
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Autor/in / Beteiligte Person: | Suzuki, Satoshi ; Lampert, Lester ; K T Asma Beevi ; Kurian Dileep, J ; Brando Perez Esparza ; Timbadiya, Jaykant B. ; Jong Seok Park ; Watson, Thomas F. ; Juarez-Hernandez, Esdras ; Mladenov, Todor ; Subramanian, Sushil ; Rahman, Mustafijur ; Klotchkov, Ilya ; Premaratne, S.P. ; Sirisha Rani Kale ; Soni, Saksham ; Pellerano, Stefano |
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Zeitschrift: | IEEE Journal of Solid-State Circuits, Jg. 56 (2021-11-01), S. 3289-3306 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1558-173X (print) ; 0018-9200 (print) |
DOI: | 10.1109/jssc.2021.3115988 |
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