Band gap engineering of ZnO for high efficiency CIGS based solar cells
In: Oxide-based Materials and Devices, 2010-02-11
Online
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Zugriff:
Thin film solar cells based on Cu(In,Ga)Se2, called CIGS, is one of the most promising technologies for low cost, high efficiency photovoltaics. The CIGS device is composed of four layers; molybdenum back contact, CIGS p-type absorber, n-type buffer layer and doped ZnO top contact. The most common buffer layer is CdS, however it is desirable to find a Cd-free, large band gap alternative. In this paper, the use of ZnO-based buffer layers deposited by atomic layer deposition, ALD is described. Efficiencies of over 18% are shown by using Zn(O,S) or (Zn,Mg)O by ALD followed by sputtered ZnO:Al. The role of the conduction band alignment across the heterojunction is discussed, and results for large band gap CuGaSe2 absorbers are presented. In addition, light-soaking effects for devices with (Zn,Mg)O-based buffer layers are related to measurements of persistent photoconductivity of ALD-(Zn,Mg)O thin films.
Titel: |
Band gap engineering of ZnO for high efficiency CIGS based solar cells
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Autor/in / Beteiligte Person: | Törndahl, Tobias ; Platzer-Björkman, Charlotte ; Hultqvist, Adam ; Pettersson, Jonas |
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Zeitschrift: | Oxide-based Materials and Devices, 2010-02-11 |
Veröffentlichung: | SPIE, 2010 |
Medientyp: | unknown |
ISSN: | 0277-786X (print) |
DOI: | 10.1117/12.846017 |
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