Influence of annealing in nitrogen on the structural, electrical, and optical properties of CdO films doped with samarium
In: Materials Chemistry and Physics, Jg. 117 (2009-09-01), S. 284-287
Online
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Zugriff:
Thin films of cadmium oxide (CdO) doped with 1.5 wt pct samarium were prepared by a vacuum evaporation on glass and Si wafer substrates. The prepared films were annealed in nitrogen gas at 200 °C, 250 °C, and 300 °C and characterised by the X-ray fluorescence and diffraction. It was observed that the N-annealing of CdO:Sm films has no a considerable effect on their CdO cubic crystalline parameters, crystallinity, and energy gap. However, the electrical measurements show that CdO:Sm is an n-type degenerate semiconductor and the nitridation increases its conductivity and carrier concentration. These results were explained according to the available models. In general, the low-temperature nitridation is a useful complementary operation for the production a better transparent conducting oxide TCO.
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Influence of annealing in nitrogen on the structural, electrical, and optical properties of CdO films doped with samarium
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Autor/in / Beteiligte Person: | Dakhel, A.A. |
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Zeitschrift: | Materials Chemistry and Physics, Jg. 117 (2009-09-01), S. 284-287 |
Veröffentlichung: | Elsevier BV, 2009 |
Medientyp: | unknown |
ISSN: | 0254-0584 (print) |
DOI: | 10.1016/j.matchemphys.2009.06.003 |
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