A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS
In: IEEE Transactions on Circuits and Systems I: Regular Papers, Jg. 69 (2022), S. 42-50
Online
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Zugriff:
In this paper, a wideband low-noise amplifier (LNA) with a two-fold noise cancellation scheme is proposed. Finetuned for advanced CMOS, the proposed LNA architecture uses a common-gate input branch to provide wideband input matching. It is followed by two stages of the common-source structure which cancels the noise and distortion of the first and second stages and relaxes the design restriction on the first noise-cancellation stage. The provided circuit-level analysis is verified by simulations. The proposed LNA is fabricated in 28-nm CMOS. It achieves a minimum noise figure (NF) of 2.5 dB and input return loss (S₁₁)
Titel: |
A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS
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Autor/in / Beteiligte Person: | Bozorg, Amir ; Robert Bogdan Staszewski |
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Zeitschrift: | IEEE Transactions on Circuits and Systems I: Regular Papers, Jg. 69 (2022), S. 42-50 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2022 |
Medientyp: | unknown |
ISSN: | 1558-0806 (print) ; 1549-8328 (print) |
DOI: | 10.1109/tcsi.2021.3092960 |
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