Low frequency noise in SOI transistors (Invited Paper)
In: SPIE Proceedings, 2005-05-23
Online
unknown
Zugriff:
With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.
Titel: |
Low frequency noise in SOI transistors (Invited Paper)
|
---|---|
Autor/in / Beteiligte Person: | Woo, J. C. S. ; Tseng, Tony |
Link: | |
Zeitschrift: | SPIE Proceedings, 2005-05-23 |
Veröffentlichung: | SPIE, 2005 |
Medientyp: | unknown |
ISSN: | 0277-786X (print) |
DOI: | 10.1117/12.609628 |
Schlagwort: |
|
Sonstiges: |
|