Design of an Ultra-Compact 60-GHz Bi-Directional Amplifier in 65-nm CMOS
In: IEEE Microwave and Wireless Components Letters, Jg. 32 (2022-04-01), S. 343-346
Online
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Zugriff:
This letter presents an ultra-compact two-stage 60-GHz differential bi-directional amplifier (DBA) design in a 65-nm CMOS process. To satisfy the stability and gain requirements, a differential neutralized bi-directional common-source gain cell combined with the cross-coupled gm-boosting technique is proposed. In addition, a layout-symmetrical coupled line transformer is used as the inter-stage matching network to achieve broadband operation, reducing insertion loss and ensuring identical responses in both forward/backward modes. The proposed DBA achieves a peak gain of 16.1 dB with a 3-dB bandwidth of 15 GHz (52-67 GHz), maximum OP $_{{1 ,,dB}}$ of 5.1 dBm, $P_{{SAT}}$ of 9.6 dBm, a peak PAE of 11.5% at 62 GHz, respectively, consuming 70 mW from a power supply of 1.2 V. The circuit core occupies an ultra-compact area of only 0.0675 mm².
Titel: |
Design of an Ultra-Compact 60-GHz Bi-Directional Amplifier in 65-nm CMOS
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Autor/in / Beteiligte Person: | Li, Lianming ; Chen, Xin ; Chen, Qin ; Cheng, Depeng ; Sheng, Bin |
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Zeitschrift: | IEEE Microwave and Wireless Components Letters, Jg. 32 (2022-04-01), S. 343-346 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2022 |
Medientyp: | unknown |
ISSN: | 1558-1764 (print) ; 1531-1309 (print) |
DOI: | 10.1109/lmwc.2021.3123573 |
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