CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process
In: Materials Science in Semiconductor Processing, Jg. 87 (2018-11-01), S. 162-166
Online
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Zugriff:
In this study, Cu(In,Ga)Se2 (CIGS) absorber is grown on Mo-coated soda-lime glass substrates through co-evaporation deposition. Several types of Ga distribution in CIGS was examined by adjusting the [Ga]/([In]+[Ga]) ratio at the first and third stages. The electrical properties of the film were also determined. The carrier concentration increased with increasing Ga content. The highest carrier concentration of 8.46 × 1015 cm−3 were obtained when the [Ga]/([In]+[Ga]) ratio (0.36) was 0.4: 0.3 at the first and third stage. The best device conversion efficiency of 12.5% was achieved because the suitable [Ga]/([In]+[Ga] ratio, band-gap gradient distribution and low recombination rate.
| Titel: |
CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process
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| Autor/in / Beteiligte Person: | Jseng, Yi-Yen ; Chen, Tien-Ching ; Chao, Chin-Jung ; Sung, Huan-Hsin |
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| Zeitschrift: | Materials Science in Semiconductor Processing, Jg. 87 (2018-11-01), S. 162-166 |
| Veröffentlichung: | Elsevier BV, 2018 |
| Medientyp: | unknown |
| ISSN: | 1369-8001 (print) |
| DOI: | 10.1016/j.mssp.2018.07.020 |
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