A VHF Wide-Input Range CMOS Passive Rectifier With Active Bias Tuning
In: IEEE Journal of Solid-State Circuits, Jg. 55 (2020-10-01), S. 2629-2638
Online
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Zugriff:
Tiny implantable medical devices in millimeter size demand advanced wireless power solutions that operate at hundreds of megahertz and mainly use passive rectifiers for ac–dc power conversion. A conventional cross-connected (CC) rectifier can operate with high frequency and low input voltage but only achieves good efficiencies in a very narrow input power range, due to the shoot-through and reverse currents. This work presents a CMOS passive rectifier with active bias tuning (ABT), allowing a widely extended input range with high power conversion efficiency (PCE). In addition, we compensate for the process, voltage, and temperature variations with the ABT scheme that leads to a robust design for very-high-frequency (VHF) operation. Meanwhile, we propose a peak $V_{\mathrm {OUT}}$ searching scheme to indicate the charging/discharging directions for the ABT. We obtain a bias-voltage balancing among stacked rectifier stages with a switched-capacitor network. The proposed rectifier is fabricated in a 65-nm CMOS process. Measurement results of three chips show that the proposed rectifier improves the PCE over a wide input range, with an average maximum PCE of 64.4%.
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A VHF Wide-Input Range CMOS Passive Rectifier With Active Bias Tuning
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Autor/in / Beteiligte Person: | Lu, Yan ; Martins, Rui P. ; Mao, Fangyu ; Li, Xiaofei |
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Zeitschrift: | IEEE Journal of Solid-State Circuits, Jg. 55 (2020-10-01), S. 2629-2638 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2020 |
Medientyp: | unknown |
ISSN: | 1558-173X (print) ; 0018-9200 (print) |
DOI: | 10.1109/jssc.2020.3005814 |
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