Submicrowatt CMOS Rectifier for a Fully Passive Wake-Up Receiver
In: IEEE Transactions on Microwave Theory and Techniques, Jg. 69 (2021-11-01), S. 4803-4812
Online
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Zugriff:
This work presents a wide-range, submicrowatt CMOS rectifier, which is designed to efficiently work at input power levels down to −31 dBm. The designed rectifier uses a novel threshold voltage compensation design, namely, the design of a custom-built single-stage rectifier that supplies a nanowatt current reference circuit. The generated bias current is mirrored to the core rectifier in order to precharge its CMOS diodes. The rectifier was optimized for a minimum number of gain stages while trying to minimize the overall input parasitic capacitance of the rectifier. The proposed CMOS rectifier was designed in an in-house 130-nm CMOS technology and includes a 1.6-kV human body level ESD protection at the input terminals. Measurements reveal a high 30% power conversion efficiency (PCE) over a wide input power range from −23 to −13 dBm for a 1- ${\mathrm{ M}}\Omega $ output load at 868 MHz. PCE of over 10% is achieved for a 1- ${\mathrm{ M}}\Omega $ load at an input power of −28 dBm. The enhanced startup at submicrowatt input power levels of the CMOS rectifier enables the design of an ultralow-power passive wake-up receiver. The measured sensitivity of −31 dBm for a 1-V output voltage across a capacitive load is the lowest reported in the literature so far.
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Submicrowatt CMOS Rectifier for a Fully Passive Wake-Up Receiver
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Autor/in / Beteiligte Person: | Grosinger, Jasmin ; Steffan, Christoph ; Bosch, Wolfgang ; Holweg, Gerald ; Shetty, Darshan |
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Zeitschrift: | IEEE Transactions on Microwave Theory and Techniques, Jg. 69 (2021-11-01), S. 4803-4812 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1557-9670 (print) ; 0018-9480 (print) |
DOI: | 10.1109/tmtt.2021.3098694 |
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