Low-loss single-photon NbN microwave resonators on Si
In: Applied Physics Letters, Jg. 115 (2019-08-26), S. 092602-92602
Online
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Zugriff:
We present coplanar waveguide (CPW) microwave resonators with exceptionally low loss produced from NbN sputtered on Si. The NbN films are deposited with a modest RF substrate bias during reactive DC magnetron sputtering at a substrate temperature of 250 °C and can achieve a critical temperature as high as 15 K depending on the N2 flow rate. We measure the internal quality factors (Qi) of two such resonators at high-powers near saturation and report high-power quality factors in excess of 1.2 × 106 at 200 mK and 3.5 × 105 at 2 K. We also measure the temperature-dependent frequency shift at high power levels and the quality factor at single-photon power levels. From these measurements, we find a low-power (average photon number less than one) Qi value of 4.2 × 105 at 200 mK, which is consistent with a system limited by two-level-system loss.
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Low-loss single-photon NbN microwave resonators on Si
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Autor/in / Beteiligte Person: | Chang, C. L. ; Carter, Faustin ; Novosad, Valentyn ; Khaire, Trupti |
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Zeitschrift: | Applied Physics Letters, Jg. 115 (2019-08-26), S. 092602-92602 |
Veröffentlichung: | AIP Publishing, 2019 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/1.5115276 |
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