Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE
In: MRS Proceedings, Jg. 831 (2004)
Online
unknown
Zugriff:
The effects of the nitridation process of (0001) sapphire on crystalline quality of InN were clearly demonstrated. The InN films were grown on NFM (nitrogen flux modulation) HT-InN or LT-InN buffer layers, which had been deposited on nitridated sapphire substrates. We found that low-temperature nitridation of sapphire is effective in improving the tilt distribution of InN films. Whereas the twist distribution remained narrow and almost constant, independent of nitridation conditions, when LT-InN buffer layers were used. The XRC-FWHM value of 54 arcsec for (0002) InN, the lowest reported to date, was achieved by using the LT-InN buffer layer and sapphire nitridation at 300°C for 3 hours.
| Titel: |
Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE
|
|---|---|
| Autor/in / Beteiligte Person: | Nanishi, Yasushi ; Muto, D. ; Naoi, H. ; Araki, Tsutomu ; Kurouchi, Masahito ; Yoneda, Ryotaro |
| Link: | |
| Zeitschrift: | MRS Proceedings, Jg. 831 (2004) |
| Veröffentlichung: | Springer Science and Business Media LLC, 2004 |
| Medientyp: | unknown |
| ISSN: | 1946-4274 (print) ; 0272-9172 (print) |
| DOI: | 10.1557/proc-831-e4.2 |
| Schlagwort: |
|
| Sonstiges: |
|