Half-Metallic Behavior of Transition Metal-Doped Chalcopyrite Semiconductor: LDA and SIC-LDA Calculation
In: Journal of Superconductivity and Novel Magnetism, Jg. 29 (2016-06-11), S. 2629-2634
Online
unknown
Zugriff:
Using the first principles with local density approximation (LDA) and self-interaction-corrected local density approximation (SIC-LDA), the electronic structure of transition metal-doped copper indium sulfide chalcopyrite (CuInS2) has been calculated and the effect of low-impurity concentration on magnetic structure has been carried out for both LDA and SIC-LDA; also, the magnetic transition temperature for Cr-doped CuInS2 was reported in the concentration range of 1–6 % with LDA and SIC-LDA. It is shown that the chalcopyrite semiconductor-doped transition metals (with low concentration) exhibit a high magnetic critical temperature and half-metallic behavior that could have a significant participation in spintronic applications.
Titel: |
Half-Metallic Behavior of Transition Metal-Doped Chalcopyrite Semiconductor: LDA and SIC-LDA Calculation
|
---|---|
Autor/in / Beteiligte Person: | El Mehdi Salmani ; Dehmani, Mustapha ; El Mostafa Benchafia ; Benyoussef, Abdelilah ; Ez-Zahraouy, Hamid ; Laghrissi, Ayoub |
Link: | |
Zeitschrift: | Journal of Superconductivity and Novel Magnetism, Jg. 29 (2016-06-11), S. 2629-2634 |
Veröffentlichung: | Springer Science and Business Media LLC, 2016 |
Medientyp: | unknown |
ISSN: | 1557-1947 (print) ; 1557-1939 (print) |
DOI: | 10.1007/s10948-016-3571-6 |
Schlagwort: |
|
Sonstiges: |
|