Design to avoid the over-gate-driven effect on ESD protection circuits in deep-submicron CMOS processes
In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720), 2004-05-06
Online
unknown
Zugriff:
Although the gate-driven (or gate-coupled) technique was reported to improve ESD robustness of NMOS devices, the over-gate-driven effect has been found to degrade the ESD level. This effect makes the gate-driven technique difficult to be well optimized in deep-submicron CMOS ICs. In this work, a new design is proposed to overcome such over-gate-driven effect by circuit design and to achieve the maximum ESD capability of the devices. The experimental results have shown significant improvement on the machine-model (MM) ESD robustness of ESD protection circuits by this new proposed design. This new design is portable (process-migration) for applications in different CMOS processes without modifying the process step or mask layer.
Titel: |
Design to avoid the over-gate-driven effect on ESD protection circuits in deep-submicron CMOS processes
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Autor/in / Beteiligte Person: | Ker, Ming-Dou ; Chen, Wen-Yi |
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Zeitschrift: | SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720), 2004-05-06 |
Veröffentlichung: | IEEE Comput. Soc, 2004 |
Medientyp: | unknown |
DOI: | 10.1109/isqed.2004.1283714 |
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