5.8" Ultra-Narrow Border LCD with Soluble Metal-Oxide TFTs and Integrated with GIP Circuit.
For the first time, solution based metal‐oxide semiconductor is successfully implemented in TFT‐LCD production line. The well‐known slot‐die coating technology is used to deposit liquid phase semiconductor on Gen4 substrates. Fabricated backplane with integrated gate‐in‐panel (GIP) circuitry is used to develop 5.8″ TFT‐LCD with ultra‐narrow border (< 1 mm), a first panel of its kind which is closed to full commercialization.
GIP; Narrow Border; Gate-on Array; GOA; Solution Metal Oxide; Soluble TFT Process; Gate Driver in Panel
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By Yu‐Hsien Chena; Shin‐Chuan Chianga; Der‐Chun Wua; Kuo‐Hsing Tsenga; Yi‐Hsien Lina; Hsi‐Ming Changa; Yen‐Yu Huanga; Duy‐Vu Phamb; Kuo‐Hui Sub; Marko Marinkovicb; Dennis Weberb; Alexey Merkulovb and Ralf Anselmannb
