Electron Beam Irradiated Al Doped ZnO Thin Films as Efficient Tunnel Recombination Junction for Hydrogenated Amorphous Silicon/Cu(In,Ga)Se2 Tandem Solar Cells
In: Journal of Nanoscience and Nanotechnology, Jg. 19 (2019-03-01), S. 1480-1484
Online
unknown
Zugriff:
A tunnel recombination junction (TRJ) layer for hydrogenated amorphous silicon (a-Si:H)/ Cu(In,Ga)Se₂ (CIGS) tandem solar cells is investigated. An Al-doped zinc oxide (AZO) thin film is applied to the TRJ, and the influence of electron beam (e-beam) irradiation on defects along the TRJ is investigated. The AZO thin films are prepared using radio frequency (RF) sputtering and the e-beam is irradiated at 200 W RF power and 2 keV DC power for 5 min. In the e-beam irradiated AZO thin film, the number of oxygen vacancies and Zn interstitials increases, which in turn strengthens the effect of defect-enhanced tunnel recombination.
| Titel: |
Electron Beam Irradiated Al Doped ZnO Thin Films as Efficient Tunnel Recombination Junction for Hydrogenated Amorphous Silicon/Cu(In,Ga)Se2 Tandem Solar Cells
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| Autor/in / Beteiligte Person: | Kim, Youngkuk ; Jeong, Chaehwan ; Park, Jinjoo ; Lee, Sunhwa ; Lee, Youn-Jung ; Yi, Junsin ; Kim, Chae-Woong |
| Link: | |
| Zeitschrift: | Journal of Nanoscience and Nanotechnology, Jg. 19 (2019-03-01), S. 1480-1484 |
| Veröffentlichung: | American Scientific Publishers, 2019 |
| Medientyp: | unknown |
| ISSN: | 1533-4880 (print) |
| DOI: | 10.1166/jnn.2019.16259 |
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